PIC-MCC Simulation for Plasma Immersion Ion Implantation Processing
نویسندگان
چکیده
منابع مشابه
Perforated shield for plasma immersion ion implantation
A plasma treatment system (200) for implantation with a novel susceptor with a perforated shield (201). The system (200) has a variety of elements such as a chamber in which a plasma is generated in the chamber. The system (200) also has a susceptor disposed in the chamber to support a silicon substrate, which has a surface. The perforated shield (201) draws ions from the implantation toward an...
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In plasma immersion ion implantation (PIII), a high voltage pulsed bias is applied to a substrate to accelerate ions from a surrounding plasma for implantation beneath the surface. This technique is often used to modify the surface properties of materials. For example, the intrinsic stress of thin films can be lowered, resulting in improved adhesion. For conducting samples, the energy of the in...
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Plasma immersion ion implantation from a BF3 plasma into crystalline (100) silicon was performed using the PULSION plasma doping tool. Implanted boron profiles were measured with the SIMS method and simulated using models with different levels of sophistication. The physical implantation model is based on an analytical energy distribution for ions from the plasma and uses a Monte-Carlo simulati...
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The biggest advantage of plasma immersion ion implantation (PIII) is the capability of treating objects with irregular geometry without complex manipulation of the target holder. The effectiveness of this approach relies on the uniformity of the incident ion dose. Unfortunately, perfect dose uniformity is usually difficult to achieve when treating samples of complex shape. The problems arise fr...
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Plasma immersion ion implantation (PIII) is an established technique in certain niche microelectronics applications such as the synthesis of silicon-oninsulator. In other applications such as shallow junction formation by plasma doping, trench doping, and fabrication of blue light emitting materials, PIII has unique advantages over conventional techniques and may be the technique of choice in t...
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ژورنال
عنوان ژورنال: Journal of Plasma and Fusion Research
سال: 2004
ISSN: 0918-7928
DOI: 10.1585/jspf.80.126